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march 2008 rev 1 1/15 15 STGW45NC60VD 45 a - 600 v - very fast igbt features low c res / c ies ratio (no cross conduction susceptibility) igbt co-packaged with ultra fast free-wheeling diode applications high frequency inverters ups motor drivers induction heating description this igbt utilizes th e advanced powermesh? process resulting in an excellent trade-off between switching performance and low on-state behavior. figure 1. internal schematic diagram to-247 long leads 1 2 3 table 1. device summary order code marking package packaging STGW45NC60VD gw45nc60vd to-247 long leads tube www.st.com
contents STGW45NC60VD 2/15 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2.2 frequency applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 3 test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
STGW45NC60VD electrical ratings 3/15 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ces collector-emitter voltage (v ge = 0) 600 v i c (1) 1. calculated according to the iterative formula: collector current (continuous) at 25 c 90 a i c (1) collector current (continuous) at 100 c 50 a i cl (2) 2. vclamp = 80%(v ces ), tj = 150 c, r g = 10 ? , v ge = 15 v turn-off latching current 220 a i cp (3) 3. pulse width limited by max. junction temperature allowed pulsed collector current 220 a v ge gate-emitter voltage 20 v i f diode rms forward current at t c = 25 c 30 a i fsm surge non repetitive forward current (t p =10 ms sinusoidal) 120 a p tot total dissipation at t c = 25 c 270 w t j operating junction temperature ? 55 to 150 c table 3. thermal resistance symbol parameter value unit r thj-case thermal resistance junction -case (igbt) max 0.46 c/w r thj-case thermal resistance junction-case (diode) max 1.5 c/w r thj-amb thermal resistance junc tion-ambient max 50 c/w i c t c () t jmax t c ? r thj c ? v cesat max () t c i c , () ------------------------------------------------------------------------------------------------------ =
electrical characteristics STGW45NC60VD 4/15 2 electrical characteristics (t case =25 c unless otherwise specified) table 4. static symbol parameter test conditions min. typ. max. unit v (br)ces collector-emitter breakdown voltage (v ge = 0) i c = 1 ma 600 v v ce(sat) collector-emitter saturation voltage v ge = 15 v, i c = 30 a v ge = 15 v, i c = 30 a,t c =125 c 1.8 1.7 2.4 v v v ge(th) gate threshold voltage v ce = v ge , i c =1 ma 3.75 5.75 v i ces collector cut-off current (v ge = 0) v ce = 600 v v ce = 600 v, t c = 125 c 500 5 a ma i ges gate-emitter leakage current (v ce = 0) v ge = 20 v 100 na g fs (1) 1. pulsed: pulse duration = 300 s, duty cycle 1.5% forward transconductance v ce = 15 v , i c = 30 a 20 s table 5. dynamic symbol parameter test conditions min. typ. max. unit c ies c oes c res input capacitance output capacitance reverse transfer capacitance v ce = 25 v, f = 1 mhz, v ge = 0 290 0 298 59 pf pf pf q g q ge q gc total gate charge gate-emitter charge gate-collector charge v ce = 390 v, i c = 30 a, v ge = 15 v (see figure 19) 126 16 46 nc nc nc
STGW45NC60VD electrical characteristics 5/15 table 6. switching on/off (inductive load) symbol parameter test conditions min. typ. max. unit t d(on) t r (di/dt) onf turn-on delay time current rise time turn-on current slope v cc = 390 v, i c = 30 a, r g =10 ?, v ge = 15 v (see figure 18) 33 13 2500 ns ns a/s t d(on) t r (di/dt) on turn-on delay time current rise time turn-on current slope v cc = 390 v, i c = 30 a, r g =10 ?, v ge =15 v t c =125 c (see figure 18) 32 14 2280 ns ns a/s t r(voff) t d(off) t f off voltage rise time turn-off delay time current fall time v cc = 390 v, i c = 30 a, r g =10 ?, v ge =15 v (see figure 18) 33 178 65 ns ns ns t r(voff) t d(off) t f off voltage rise time turn-off delay time current fall time v cc = 390 v, i c = 30 a, r g =10 ?, v ge =15 v t c =125 c (see figure 18) 68 238 128 ns ns ns table 7. switching energy (inductive load) symbol parameter test conditions min. typ. max. unit e on (1) e off (2) e ts 1. eon is the turn-on losses when a typical diode is used in the test ci rcuit in figure 2 eon include diode recovery energy. if the igbt is offered in a packa ge with a co-pak diode, the co-pack diode is used as external diode. igbts and diode are at the same temperature (25c and 125c) 2. turn-off losses include also the tail of the collector current turn-on switching losses turn-off switching losses total switching losses v cc = 390 v, i c = 30 a r g =10 ? , v ge = 15 v, (see figure 20) 333 537 870 j j j e on (1) e off (2) e ts turn-on switching losses turn-off switching losses total switching losses v cc = 390 v, i c = 30 a r g =10 ? , v ge = 15 v, t c = 125 c (see figure 20) 618 1125 1743 j j j
electrical characteristics STGW45NC60VD 6/15 table 8. collector-emitter diode symbol parameter test conditions min. typ. max. unit v f forward on-voltage i f = 30 a i f = 30 a, t c = 125 c 2.4 1.8 v v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i f = 30 a, v r = 50 v, di/dt =100 a/s (see figure 21) 45 56 2.55 ns nc a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i f = 30 a, v r = 50 v, t c = 125 c, di/dt =100 a/s (see figure 21) 100 290 5.8 ns nc a
STGW45NC60VD electrical characteristics 7/15 2.1 electrical characteristics (curves) figure 2. output characteristics figure 3. transfer characteristics figure 4. transconductance figure 5. collector-emitter on voltage vs temperature figure 6. collector-emitter on voltage vs collector current figure 7. normalized gate threshold vs temperature
electrical characteristics STGW45NC60VD 8/15 figure 8. normalized breakdown voltage vs temperature figure 9. gate charge vs gate-emitter voltage figure 10. capacitance variations figure 11. switching losses vs temperature figure 12. switching losses vs gate resistance figure 13. switching losses vs collector current
STGW45NC60VD electrical characteristics 9/15 2.2 frequency applications for a fast igbt suitable for high frequency applications, the typical collector current vs. maximum operating frequency curve is report ed. that frequency is defined as follows: f max = (p d - p c ) / (e on + e off ) the maximum power dissipation is limited by maximum junction to case thermal resistance: equation 1 p d = ? t / r thj-c considering ? t = t j - t c = 125 c - 75 c = 50 c the conduction losses are: figure 14. thermal impedance figure 15. turn-off soa figure 16. emitter-collector diode characteristics figure 17. i c vs. frequency 0 10 20 30 40 50 60 70 80 90 100 110 120 0123456 vfm(v) tj=25c (maximum values) tj=125c (maximum values) tj=125c (maximum values) tj=125c (typical values) tj=125c (typical values) ifm(a)
electrical characteristics STGW45NC60VD 10/15 equation 2 p c = i c * v ce(sat) * with 50% of duty cycle, v cesat typical value @125 c. power dissipation during on and off commutations is due to the switching frequency: equation 3 p sw = (e on + e off ) * freq.typical values @ 125 c for switching losses are used (test conditions: v ce = 390 v, v ge = 15 v, r g = 10 ? ). furthermore, diode recovery energy is included in the e on (see note 2), while the tail of the collector current is included in the e off measurements (see note 3).
STGW45NC60VD test circuit 11/15 3 test circuit figure 18. test circuit for inductive load switching figure 19. gate charge test circuit figure 20. switching waveforms figure 21. diode recovery times waveform
package mechanical data STGW45NC60VD 12/15 4 package mechanical data in order to meet environmental requirements, st offers these devices in ecopack? packages. these packages have a lead-free second level interconnect. the category of second level interconnect is marked on the package and on the inner box label, in compliance with jedec standard jesd97. the maximum ratings related to soldering conditions are also marked on the inner box label. ecopack is an st trademark. ecopack specifications are available at: www.st.com
STGW45NC60VD package mechanical data 13/15 to-247 lon g lead s mechanical data dim. mm min. typ. max. a4. 8 5 5.16 d2.2 2.6 e0.4 0. 8 f1 1.4 f1 3 f2 2 f 3 1.9 2.4 f4 33 .4 g 10.9 h 15.45 16.0 3 l19. 8 5 21.09 l1 3 .7 4. 3 l2 1 8 . 3 19.1 3 l 3 14.2 20. 3 l4 3 4.05 41. 38 l5 5. 3 56. 3 m2 3 v5 v2 60 dia 3 .55 3 .65 5 a dia d me f1 f2 f3 f4 f(x3) g = = v2 h l5 l1 l2 l l4 l3 v 7 3 95426_rev_d
revision history STGW45NC60VD 14/15 5 revision history table 9. document revision history date revision changes 19-mar-2008 1 first release
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